The STW78N65M5 and STW62N65M5 from STMicroelectronics are the industry’s first 650V AEC-Q101 automotive-qualified MOSFETs in the popular TO-247 package. The 650V rating provides greater safety margin when exposed to high-voltage spikes, enhancing the reliability of automotive power and control modules. The two devices’ extremely low on-resistance, of 0.032Ω and 0.049Ω respectively, combined with the compact TO-247 outline, enhancing system energy efficiency and power density.
The new devices owe their industry leading performance to ST’s MDmesh V super-junction technology, which produces high voltage devices with very low RDS(ON) per die area allowing smaller package sizes. Gate charge (Qg) and input capacitance are also low, resulting in outstanding Qg x RDS(ON) figure of merit (FOM) with high switching performance and efficiency. In addition, superior avalanche robustness ensures increased ruggedness at sustained high-voltage operation.
MDmesh V combines an innovative proprietary vertical process technology with STMicroelectronics’ proven PowerMESH horizontal architecture, achieving around 50% lower on-resistance than comparable MDmesh II devices.
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