STMicroelectronics enhances RF Front-end Technology using H9SOI_FEM

Booming demand for faster wireless broadband connections is calling for increasingly complex circuitry inside devices such as smartphones and tablets. To address this demand, STMicroelectronics has introduced a new technology platform for RF (radio frequency) Front- end of wireless/mobile devices named H9SOI_FEM. 
 
Flavio Benetti, General Manager of Mixed Process Division, STMicroelectronics, said, The H9SOI_FEM dedicated process enables our customers to develop state-of-the-art front-end modules that are half the size or smaller compared to today’s front-end solutions. Moreover, we have achieved a simplified process flow to enable extremely short overall lead times and supply flexibility, which are crucial for end-customers in this market.
 
ST’s new manufacturing process, H9SOI_FEM, allows production of complete integrated front-end modules. In wireless devices, the RF front-end circuit is typically built using individual amplifiers, switches and tuners. As new high-speed standards such as 4G mobile and Wi-Fi (IEEE 802.11ac) use multiple frequency bands to increase data throughput, the latest equipment requires additional front-end circuitry.
 
ST is working with customers on new designs using H9SOI_FEM. Volume ramp-up of this platform is expected by the end of this year.