Freescale Semiconductor has introduced its first RF power amplifier product built using gallium nitride (GaN) technology. The company is believed to initially target the cellular infrastructure market, with potential future applications including avionics, radar, ISM and software-defined radio.
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Ritu Favre, VP & GM, RF Division, Freescale said, “Working with GaN in development since the mid-2000s, we have established an ideal blend of cost-efficiency, performance and reliability, and the time is now right to add GaN-based products to our broad array of RF power amplifier solutions.”














